• DocumentCode
    3463505
  • Title

    A 2kV ESD-Protected 18GHz LNA with 4dB NF in 0.13μm CMOS

  • Author

    Cao, Yiqun ; Issakov, Vadim ; Tiebout, Marc

  • Author_Institution
    Infineon Technol., Munich
  • fYear
    2008
  • fDate
    3-7 Feb. 2008
  • Firstpage
    194
  • Lastpage
    606
  • Abstract
    As the frequency spectrum below 10GHz is becoming extremely crowded alternative higher frequency bands are getting a large attention despite their associated high dispersion losses and need for a direct line-of-sight. Recently, numerous published work have targeted the free spectrum at 60GHz, but near-future commercial applications may prefer the frequency bands at 17 to 17.2GHz (ETSI) and/or 24 to 24.2GHz (ISM band) to enable the use of cheap package options (VQFN or flip-chip), and classical board- and antenna-mounting techniques.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; CMOS; LNA; antenna-mounting; board-mounting; frequency spectrum; Clamps; Electrical resistance measurement; Electrostatic discharge; Frequency; Inductors; MOSFETs; Noise measurement; Protection; Semiconductor device measurement; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-2010-0
  • Electronic_ISBN
    978-1-4244-2011-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2008.4523123
  • Filename
    4523123