Pirani gauge based on alternative self-heating of silicon nanowire

Author

Ruellan, J. ; Arcamone, J. ; Mercier, D. ; Dupre, C. ; Duraffourg, L.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

16-20 June 2013

Firstpage

2568

Lastpage

2571

Abstract

This work reports on the realization of the smallest Pirani gauge ever, based upon highly-doped silicon nanowires. This paper details the fabrication process and the characterization of the thermal properties of Si nanowires, such as thermal conductivity and thermal coefficient of resistivity for various working temperatures in the 300K-700K range. A dynamic transduction technique, based on the 3-omega measurement is described and the device performances (i.e. sensitivity and signal-to-noise ratio) are measured. With the tested devices a resolution below 5%/Hz^1/2 is obtained in the 0.1mbar-1bar range.

Keywords

elemental semiconductors; nanofabrication; nanowires; pressure sensors; silicon; thermal conductivity; 3- omega measurement; Pirani gauge; Si; alternative self-heating; dynamic transduction technique; fabrication process; highly-doped silicon nanowires; pressure 0.1 bar to 1 bar; sensitivity; signal-to-noise ratio; temperature 300 K to 700 K; thermal coefficient of resistivity; thermal conductivity; thermal properties; Conductivity; Heating; Silicon; Temperature measurement; Temperature sensors; Thermal conductivity; 3-omega measurement; Pirani gauge; silicon nanowire; thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627330

Filename

6627330