Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

Author

Yu, H.Y. ; Li, M.-F. ; Lauwers, A. ; Kittl, J.A. ; Singanamalla, R. ; Veloso, A. ; Hoffmann, T. ; De Meyer, K. ; Jurczak, M. ; Absil, P. ; Biesemans, S.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

Oct. 2006

Firstpage

404

Lastpage

407

Abstract

In this paper, the authors present a study on the advanced Ni-based fully silicidation (FUSI) technology, which could satisfy various technology requirements of sub-45nm CMOS node, from the device Vt point of view. For n-FETs, adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72eV) to near n-type band-edge (~4.22eV) on thin SiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. The authors also report on the use of a Ni fully germano-silicide (FUGESI) as a metal gate in pFETs

Keywords

CMOS integrated circuits; Ge-Si alloys; aluminium; field effect transistors; nickel; platinum; silicon compounds; work function; ytterbium; 45 nm; Al; CMOS devices; Ni; Pt; SiGe; SiON; Yb; field effect transistors; fully silicidation technology; metal gates; work function; Annealing; Atherosclerosis; CMOS technology; Electrodes; FETs; High K dielectric materials; High-K gate dielectrics; Ion implantation; Silicidation; Ytterbium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306263

Filename

4098120