• DocumentCode
    3464215
  • Title

    La-based oxides for high-k gate dielectric application

  • Author

    Ahmet, Parhat ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Sugii, Nobuyuki ; Hattori, Takeo ; Iwai, Hiroshi

  • Author_Institution
    Frontier Collaborative Res. Center, Tokyo Inst. of Technol.
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    408
  • Lastpage
    411
  • Abstract
    Thermal stability of rare earth oxides La2O3/Y2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO 2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer
  • Keywords
    MOSFET; X-ray photoelectron spectra; dielectric materials; lanthanum compounds; rapid thermal annealing; silicon compounds; thermal stability; yttrium compounds; MOSFET; X-ray photoelectron spectroscopy; high temperature annealing; mobility degradation; rare earth oxides; thermal stability; Annealing; Dielectrics and electrical insulation; Heat treatment; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon; Temperature; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306264
  • Filename
    4098121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3464215