Nonlinear pulse compression lines concepts

Previous work by this author has identified three key elements for optimizing the performance of NL lines. These include the superiority of resonant complementary lines[1][2] where i) both saturable inductances and saturable capacitances are used; ii) parasitic inductances and capacitances need to maintain a unique impedance relation with the individual stage impedances for highest efficiency; iii) there is an optimum number of stages for peak efficiency for any given power multiplication. Here we derive switch non-linearity performance parameter, α, which equals G*W, (the product of the power multiplication G by the energy compressed W per unit volume of switch material in one switching operation). When saturable materials are used as the power multiplying medium, it is shown that α equals the area under the B vs. H and the D vs. E curves. For semiconductor and photoconductors switches it is the power density of the switch times its blocking time before switching. We compare the various technologies based on this performance parameter to show the superiority of photoconductors using silicon as photoconductive off switches and GaN as on switches by many orders of magnitude over ferroelectric and ferromagnetic switches.