Complimentary Bit Disturb in MirrorBitTM Flash Technology

Author

Wang, Linda ; Darilek, John ; Clopton, Mark ; Klein, Greg ; Baker, Ray ; Shingo, Masaki ; Kirsch, Travis

Author_Institution

Spansion LLC, Austin, TX

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

766

Lastpage

768

Abstract

One of the most important breakthroughs in the area of non-volatile memories is the MirrorBittrade technology, which enables two bits to be stored in a single cell with a simple architecture and manufacturing process. Complimentary bit disturb (CBD), a critical property for MirrorBittrade or dual bit memory, has been followed with wide interest. This paper presents a study of CBD with various cell parameters like channel length, dielectrical layer thickness, and bitline width on MirrorBittrade devices. All experimental data was collected from MirrorBittrade production wafers, which represent the latest flash manufacturing technology

Keywords

dielectric materials; flash memories; integrated circuit manufacture; random-access storage; MirrorBit flash technology; MirrorBit production wafers; bitline width; channel length; complimentary bit disturb; dielectrical layer thickness; dual bit memory; nonvolatile memories; Channel hot electron injection; Charge carrier processes; Dielectric devices; Electron traps; Hot carriers; Manufacturing processes; Mirrors; Nonvolatile memory; Production; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306480

Filename

4098228