Novel HfAIO charge trapping layer in SONOS type flash memory for multi-bit per cell operation

Author

Zhang, Gang ; Yoo, Won Jong

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

781

Lastpage

783

Abstract

A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon) type memory for multi-bit per cell operation by channel hot electron injection (CHEI) programming and hot hole injection (HHI) erase with a SiO₂/HfAlO/SiO₂ structure is proposed. Compared to conventional NROM, HfAlO shows the advantages of high speed program/erase of HfO₂ as well as good charge retention and high crystallization temperature of Al₂O₃, which makes HfAlO a very promising candidate for the charge storage layer. Excellent 2-bit per cell property with good 10-year charge retention is demonstrated from the charge retention tests, as well as the programming/erasing operations

Keywords

aluminium compounds; flash memories; hafnium compounds; read-only storage; silicon compounds; Al₂O₃; HfAlO-SiO₂; NROM; SONOS type flash memory; channel hot electron injection programming; charge retention; charge storage layer; charge trapping; hot hole injection; multi-bit per cell operation; Annealing; Channel hot electron injection; Crystallization; Flash memory; High K dielectric materials; High-K gate dielectrics; Hot carriers; Laboratories; SONOS devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306485

Filename

4098233