Novel 0.18um Single-Body Control Gate Cell Structure and Co-Salicide Technology for High-Density and High Performance Embedded NOR Flash Applications

Author

Xiao, Deyuan ; Kim, JongWoo ; Choi, T.H. ; Lee, M.Y. ; Cho, M.K. ; Song, Jerry ; Jin, Waver ; Yen, Chinfu ; Yi, Champion

Author_Institution

Special Flash Div., Semicond. Manuf. Int. Corp., Shanghai

fYear

2006

fDate

Oct. 2006

Firstpage

806

Lastpage

808

Abstract

A novel 2-T single-body control gate tied with two floating gates cell device structure using 0.18mum co-salicide technology for high-density and high performance embedded NOR flash applications has been developed. 2P6M CMOS, retrograded triple-well, conventional STI isolation, stack gate type, dual gate oxide as well as low k FSG interconnect were implemented in the process integration. A thin oxide deglazes step undercuts the pad oxide and liner oxidation at high-temperature are used to make the STI trench top corner smoother as the trench top corner is a key factor for data retention

Keywords

CMOS memory circuits; NOR circuits; embedded systems; flash memories; 0.18 micron; 2P6M CMOS; FSG interconnect; STI isolation; co-salicide technology; data retention; embedded NOR flash memories; floating gates cell; single-body control gate cell; CMOS process; Channel hot electron injection; Circuits; Etching; Flash memory; Isolation technology; Manufacturing processes; Nonvolatile memory; Oxidation; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306513

Filename

4098240