Electron Transport in InN

Author

Schwierz, Frank ; Polyakov, Vladimir M.

Author_Institution

Fachgebiet Festkorperelektronik, Technische Univ. Ilmenau

fYear

2006

fDate

Oct. 2006

Firstpage

845

Lastpage

848

Abstract

The paper provides an overview on the current understanding of electron transport in wurtzite indium nitride (InN). First, recent findings concerning the bandgap of InN are reviewed and their consequences on electron transport are discussed. Then, applying the ensemble Monte Carlo method and new band structure data from the literature, the electron transport in InN is investigated in detail. We calculate a peak steady-state drift velocity of more than 5times10⁷ cm/s at an electric field of 32 kV/cm, a pronounced transient velocity overshoot, and a remarkably high low-field mobility of 14000 cm²/Vs for undoped InN. The features of the electron transport in InN are compared to those in other semiconductors and the prospects of InN-based highspeed transistors are addressed

Keywords

III-V semiconductors; Monte Carlo methods; electron mobility; electron transport theory; indium compounds; wide band gap semiconductors; InN; Monte Carlo method; band structure data; electron transport; peak steady-state drift velocity; wurtzite indium nitride; Acoustic scattering; Effective mass; Electron mobility; Gallium nitride; Indium; Lattices; Optical scattering; Phonons; Photonic band gap; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306526

Filename

4098253