DocumentCode
3466784
Title
TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS
Author
Tanomura, Masahiro ; Hamada, Yasuhiro ; Kishimoto, Shuya ; Ito, Masaharu ; Orihashi, Naoyuki ; Maruhashi, Kenichi ; Shimawaki, Hidenori
Author_Institution
NEC, Otsu
fYear
2008
fDate
3-7 Feb. 2008
Firstpage
558
Lastpage
635
Abstract
This paper describes the design of a mm-wave power amplifier PA with reliability considerations for hot carrier injection (HCI) degradation. A 60GHz-band single-chip transmitter front- end with an output power of 6dBm for 2.6 Gb/s QPSK modulation and a single-chip receiver front-end are implemented in a standard IV 90 nm CMOS technology.
Keywords
CMOS integrated circuits; hot carriers; millimetre wave power amplifiers; quadrature phase shift keying; QPSK modulation; bit rate 2.6 Gbit/s; bulk CMOS; frequency 60 GHz; hot carrier injection degradation; millimeter-wave power amplifier; reliability considerations; single-chip receiver front-end; single-chip transmitter front- end; size 90 nm; Demodulation; Gain measurement; Impedance matching; Power generation; Power measurement; Q measurement; Quadrature phase shift keying; Radio frequency; Radio transmitters; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-2010-0
Electronic_ISBN
978-1-4244-2011-7
Type
conf
DOI
10.1109/ISSCC.2008.4523305
Filename
4523305
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