Epitaxial lateral overgrowth of gallium nitride without mask on sapphire

GaN has attracted great interest world wide during these years. Epitaxial growth technique such as epitaxial lateral overgrowth (ELO) has been proved to be a very effective way to produce a high-quality GaN layer, so many studies made researches on this field. In this work, GaN was deposited on sapphire c side (0001) wafers as the ELO theory without mask by metal organic chemical vapor deposition (MOCVD). The growth mechanism was also analyzed and the properties of GaN layer were investigated by double-crystal X-ray diffraction, atomic force microscopy and wet chemical etching. The result proved that higher-quality GaN layer was received using this method