• DocumentCode
    3467214
  • Title

    Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3

  • Author

    Takao, K. ; Harada, S. ; Shinohe, T. ; Ohashi, H.

  • Author_Institution
    Corporative R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2010
  • fDate
    21-24 June 2010
  • Firstpage
    2128
  • Lastpage
    2134
  • Abstract
    In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.
  • Keywords
    current density; power MOSFET; power convertors; silicon compounds; IEMOSFET; SiC; cooling systems; current density; epitaxial MOSFET; high-power density power converter designs; performance evaluation; power devices; power losses; temperature 150 degC to 250 degC; Current density; Data mining; Electronics industry; MOSFET circuits; Multichip modules; Power MOSFET; Power electronics; Silicon carbide; Temperature distribution; Voltage; Power density; Power loss; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC), 2010 International
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-5394-8
  • Type

    conf

  • DOI
    10.1109/IPEC.2010.5543727
  • Filename
    5543727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3467214