• DocumentCode
    3467421
  • Title

    Proposition and demonstration of 3tr. type ion image sensor pixel structure for highly resolution bio-imaging

  • Author

    Fujita, M. ; Shimizu, K. ; Watanabe, S. ; Dasai, F. ; Futagawa, M. ; Ishida, M. ; Sawada, K.

  • Author_Institution
    Toyohashi Univ. of Technol., Toyohashi, Japan
  • fYear
    2015
  • fDate
    21-25 June 2015
  • Firstpage
    1565
  • Lastpage
    1568
  • Abstract
    We propose a pixel construction for a pH image sensor with a new measurement method that spills charge to a potential wall under sensing area. The sensor pixel with 3 transistors has advantages for fabricating the sensor array with high spatial resolution compared with a conventional ISFET type sensor array using 4 transistors. The pixel size of the fabrication using the 3 transistor structure is 2 μm × 2 μm. The line sensor was fabrication in 256 pixels. The sensor was fabricated in 4 metal 0.34 μm CMOS process. The sensor has a distinguishable spatial resolution for cells individually, because the sensor is expected to effectiveness at observation of the neuronal networks,
  • Keywords
    CMOS image sensors; biomedical imaging; chemical sensors; image resolution; pH measurement; sensor arrays; 3 transistor type ion image sensor pixel structure; CMOS process; cells; high resolution bioimaging; line sensor; neuronal networks; pH image sensor; pixel construction; sensor array; size 0.34 mum; spatial resolution; Arrays; Charge transfer; Image sensors; Logic gates; Metals; Sensors; Transistors; Charge-transfer-type; Chemical sensor; ISFET; pH sensor; sensor array;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
  • Conference_Location
    Anchorage, AK
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2015.7181237
  • Filename
    7181237