A current-mode CMOS bandgap reference for differential signal processing

Author

Li, Dan ; Ye, Jinghua ; Hong, Zhiliang

Author_Institution

State Key-Lab. of ASIC & Syst., Fudan Univ., Shanghai

Volume

1

fYear

2005

fDate

24-0 Oct. 2005

Firstpage

454

Lastpage

458

Abstract

This paper introduces a current-mode CMOS bandgap reference that is used in high speed and high resolution ADC. It generates the temperature-independent reference current that is converted to low temperature-drift differential voltage. The reference voltage can be defined by the actual requirement of ADC and has good anti-interference. The circuit is realized in 0.18 mum CMOS process and the occupied area is 250 mum times 350 mum. The power dissipation is 0.9mW under 3.3V supply. The average temperature coefficient of the output differential reference voltage is 9.5ppm/C

Keywords

CMOS integrated circuits; analogue-digital conversion; current-mode circuits; energy gap; reference circuits; signal processing; 0.18 micron; 0.9 mW; 250 micron; 3.3 V; 350 micron; analog-to-digital converter; current mode CMOS bandgap reference; differential signal processing; low temperature-drift differential voltage; temperature independent reference current; CMOS process; CMOS technology; Circuits; DC generators; Low voltage; Photonic band gap; Resistors; Signal processing; Temperature control; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Conference_Location

Shanghai

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611356

Filename

1611356