Electron Velocity Saturation and Probable Cross-Section Area of Leakage Current Path Post Soft Breakdown (SBD) in Ultrathin Gate Oxides

Author

Xu, Ming-Zhen ; Tan, Chang-Hua

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1122

Lastpage

1125

Abstract

The post soft breakdown (SBD) current saturation behavior was studied on the basis of electron velocity saturation concept by using the proportional difference operator (PDO) method. It is shown that the proportional difference peak height and position of the post soft breakdown I-V curves are related to the saturation current density and the saturation velocity of electron in SBD path, respectively. The probable cross-section size of post SBD leakage current path in SiO₂ is studied based on the defect scattering mechanism also

Keywords

current density; difference equations; leakage currents; semiconductor device breakdown; silicon compounds; electron velocity saturation; leakage current path post soft breakdown; probable cross-section area; proportional difference operator method; saturation current density; ultrathin gate oxides; Conductors; Current density; Current measurement; Electric breakdown; Electron mobility; Leakage current; Microelectronics; Optical scattering; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306700

Filename

4098341