Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results

Slater´s 3-dimensional localized perturbation theory for bound electronic states at bulk donor and acceptor impurity ions in solids, as extended by Sah, anticipates U-shaped energy distributions of bound electronic states from neutral electron and hole interface traps due to random variations of the Si:Si and Si:O bond angle and length. Energy dissipation of electronic transitions at the interface traps anticipates the rate of electron capture into neutral electron trap larger for electron trap energy levels nearer the conduction band edge, and similarly, the rate of hole capture into neutral hole trap larger for hole trap energy levels nearer the valence band edge. Historical searches of U-shaped density of electronic states, the perturbation theory, and the effects on the current versus voltage lineshape of electron-hole recombination current from interface traps are described