DocumentCode
3469626
Title
Investigation of Double gate structure for RF application
Author
Xiao, Han ; Liang, Jiale ; Lei, Ke ; Xiong, Chi ; Huang, Ru
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1352
Lastpage
1354
Abstract
In this paper, the relative RF characteristics of double gate and single gate structures are carefully investigated and compared. Also the impact of structural parameters on RF performance, such as body thickness, gate resistance and spacer lateral length is well studied and optimized to get more specified and practical results
Keywords
field effect transistors; microwave devices; RF application; body thickness; double gate structure; gate resistance; single gate structures; spacer lateral length; structural parameters impact; Cutoff frequency; Immune system; Intrusion detection; Leakage current; Logic; Microelectronics; Radio frequency; Structural engineering; System-on-a-chip; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306158
Filename
4098406
Link To Document