• DocumentCode
    3469916
  • Title

    FOUP N2 purge engineering in Fab

  • Author

    Yiting Kuo ; Tsao, Hen-Wai ; Tuung Luoh ; Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu

  • Author_Institution
    Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    6-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Airborne molecular contamination (AMC) becomes more serious in Fab as the device shrinks and wafer size increases, an economic way for preventing these contaminations is to use N2 purge charging process. The practical FOUP N2 purge engineering is addressed here, which includes the maintenance and management of FOUPs, N2 purge charging flow rate, the design of nozzle, selection of nuzzle material, and tool configuration.
  • Keywords
    contamination; maintenance engineering; nozzles; semiconductor industry; AMC; FOUP maintenance; FOUP management; FOUP purge engineering; N2; airborne molecular contamination; front opening unified pod; nozzle design; nozzle material; purge charging flow rate; purge charging process; tool configuration; wafer size; Etching; AMC; Condense; FOUP Contamination; Humidity; N2 Purge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    e-Manufacturing & Design Collaboration Symposium (eMDC), 2013
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/eMDC.2013.6756056
  • Filename
    6756056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3469916