DocumentCode
3470362
Title
Effect of leveler on microstructure and stress of electroplated copper for TSV application
Author
Xue Feng ; Wei Luo ; Ming Li ; Su Wang
Author_Institution
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2013
fDate
11-13 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.
Keywords
copper; electroplated coatings; internal stresses; three-dimensional integrated circuits; Cu; SEM; TEM; TSV application; copper electroplating; electrochemistry; leveler effect; microstructure; residual stress; through silicon via; Copper; Filling; Films; Grain size; Residual stresses; Through-silicon vias; TSV; electroplating; stress;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location
Kyoto
Print_ISBN
978-1-4799-2718-0
Type
conf
DOI
10.1109/ICSJ.2013.6756081
Filename
6756081
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