A large-current-output boosted voltage generator with non-overlapping clock control for sub-1-V memory applications

Author

Min, Kyeong-Sik ; Kim, Young-Hee ; Kim, Daejeong ; Kim, Dong Myeong ; Ahn, Jin-Hong

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

fYear

2004

fDate

27-30 Jan. 2004

Firstpage

288

Lastpage

291

Abstract

A new CMOS large-current-output positive pump is proposed and compared with the conventional pump. In this new pump scheme, two auxiliary pumps which are driven by nonoverlapping clocks control the transfer and precharge switches, respectively, increasing the ´ON´ conductance of the transfer switches very much at sub-1-V-V_DD range. The output current improvement of this new pump reaches to 1.6 times larger than the conventional pump with an area penalty less than 10%. This new pump was fabricated in 0.35-μm n-well process technology and its effectiveness is firstly verified.

Keywords

CMOS memory circuits; exciters; power supply circuits; timing circuits; CMOS large-current-output positive pump; large-current-output boosted voltage generator; n-well process technology; nonoverlapping clock control; precharge switches; sub-1-V memory application; Acceleration; Boosting; Charge pumps; Clocks; Flash memory; Hot carriers; Research and development; Switches; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific

Print_ISBN

0-7803-8175-0

Type

conf

DOI

10.1109/ASPDAC.2004.1337582

Filename

1337582