• DocumentCode
    3474413
  • Title

    Electromigration in Flip-chip solder joints

  • Author

    Chen, Chih

  • Author_Institution
    Dept. of Material Sci. & Eng., Nat. Chiao Tung Univ., Hsin-chu
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    2121
  • Lastpage
    2124
  • Abstract
    With the portable devices becoming smaller and more compact in size, flip-chip technology has been adopted for fine-pitch packaging in microelectronics industry. Area array of tiny solder joints can be fabricated on Si chips to achieve high-density packaging. In addition, as the required performance continues to increase, the input/output (I/O) pin count of flip-chip products has dramatically increased and the current that each bump needs to carry continues to increase, resulting in higher current density flowing in each solder bump. Therefore, electromigration (EM) has become an important reliability issue in solder joints. It has been reported that serious current crowding and Joule heating are responsible for the failure mechanism. In this talk, role of current crowding and Joule heating on void formation and propagation will be presented. Furthermore, the methods for relieving current crowding and Joule heating will be discussed to prolong electromigration lifetime
  • Keywords
    electromigration; fine-pitch technology; flip-chip devices; integrated circuit packaging; integrated circuit reliability; soldering; solders; Joule heating; Si chips; current crowding; current density; electromigration; failure mechanism; fine-pitch packaging; flip-chip solder joint; high-density packaging; input/output pin count; microelectronics industry; portable device; reliability; solder bump; void formation; Cathodes; Current density; Electromigration; Flip chip solder joints; Heating; Microelectronics; Packaging; Proximity effect; Soldering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306635
  • Filename
    4098644