• DocumentCode
    3474886
  • Title

    Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices

  • Author

    Hou, Yunhe ; Chen, Bing ; Gao, Bingzhao ; Lun, Z.Y. ; Xin, Ziling ; Liu, Richard ; Liu, L.F. ; Han, D.D. ; Wang, Yannan ; Liu, X.Y. ; Kang, J.F.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms´ diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed.
  • Keywords
    aluminium; hafnium compounds; platinum; random-access storage; titanium compounds; RRAM devices; atom diffusion; bipolar resistive switching phenomenon; reset process; resistive switching random access memory devices; robust self-compliance multilevel operation; self-compliance multilevel resistive switching characteristics; set process; Annealing; Hafnium oxide; Switches; HfOx; Multilevel storage; Resistive random access memory (RRAM);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628050
  • Filename
    6628050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3474886