Effects of antimony and arsenic ion implantation on high performance of ultra high voltage device

Author

Vasantha Kumar, V.N. ; Manjunatha, M. ; Suresh, Vikram ; Shao Ming Yang ; Gene Sheu ; Chen, P.A.

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

This paper presents a low cost innovative dual channel engineering to simulate the effects of arsenic and antimony implantation over breakdown voltage and on state resistance of an Ultra High Voltage (UHV) device. There are many devices in market with multiple conduction paths, but all these devices use high energy implants. But we have used a low cost and low energy implant over P-top to form an extra conduction path. Optimizations are done to obtain high breakdown voltage and lower Ron by varying the P-top and Ntop over P-top. We demonstrate interface charge analysis for both Antimony and Arsenic implantation over P-top and also we investigate the effect of N-top implantation before and after NDrift diffusion on breakdown voltage.

Keywords

MOSFET; antimony; arsenic; electric breakdown; As; N-drift diffusion; N-top implantation; P-top implantation; Sb; UHV device; antimony ion implantation; arsenic ion implantation; breakdown voltage; conduction path; high energy implants; interface charge analysis; lateral double-diffusion MOS transistor; low cost innovative dual channel engineering; multiple conduction paths; state resistance; ultrahigh voltage device; Electric breakdown; Dual channel engineering; N-Drift diffusion; N-top implantation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628068

Filename

6628068