A study of fluorine dose and implant energy to the NBTI upon p+ implant sequence

Author

Md Saad, Siti Zubaidah ; Tan Chan Lik ; Herman, Sukreen Hana

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. Mara, Shah Alam, Malaysia

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Negative Bias Temperature Instability (NBTI) is one of the major issues related to p-channel metal-oxide-semiconductor (PMOS) reliability that has been discussed for more than 40 years. In this paper, we discussed the effect of fluorine (F) co-implant to the NBTI improvement, capacitance and silicon oxide (SiO₂) thickness in term of F concentration, implant energy and also implant sequence at p+-region. Results suggest that, besides F dose and implant energy that is known to contribute to NBTI behaviors; implant sequence also plays a role in NBTI degradation.

Keywords

MOSFET; capacitance; fluorine; ion implantation; negative bias temperature instability; semiconductor device reliability; semiconductor doping; silicon compounds; F; NBTI; PMOS reliability; SiO₂; capacitance; fluorine dose; implant energy; negative bias temperature instability; p+ implant sequence; p-channel metal-oxide-semiconductor reliability; silicon oxide thickness; Implants; Nitrogen; Silicon; Standards; NBTI; dose; energy; fluorine; implant sequence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628076

Filename

6628076