• DocumentCode
    3475517
  • Title

    Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures

  • Author

    Lau, W.S. ; Wong, O.Y. ; Wong, Hang

  • Author_Institution
    Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors.
  • Keywords
    Poole-Frenkel effect; Schottky effect; capacitors; hafnium compounds; high-k dielectric thin films; leakage currents; HfO2; Schottky emission; hafnium oxide capacitors; high-k dielectric capacitor structures; leakage current; unified Schottky-Poole-Frenkel theory; Capacitors; high-k capacitors; unified theory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628085
  • Filename
    6628085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475517