Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Device Involving Multiple Failure Mechanisms

In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature