Integration of diamond-like carbon and AlN for acoustic wave devices

Author

Changjian Zhou ; Yi Yang ; Hualin Cai ; Hao Jin ; Bin Feng ; Shurong Dong ; Mansun Chan ; Tian-Ling Ren

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

The integration of diamond-like carbon (DLC) and piezoelectric AlN thin film for acoustic wave devices has been presented. Provided the high acoustic velocity and high thermal conductivity of DLC, the AlN/DLC/Si layered structure will outperform the traditional AlN/Si structure for acoustic wave devices. In this paper, the key issues including the deposition of DLC and AlN for implementing DLC based acoustic wave device have been experimentally investigated and surface acoustic wave resonators have been fabricated based on the AlN/DLC/Si layered structure.

Keywords

III-V semiconductors; acoustic wave velocity; aluminium compounds; diamond-like carbon; piezoelectric thin films; surface acoustic wave resonators; thermal conductivity; wide band gap semiconductors; AlN-C-Si; Si; acoustic velocity; acoustic wave devices; diamond-like carbon; piezoelectric AIN thin film; surface acoustic wave resonators; thermal conductivity; Silicon; Vacuum technology; AlN; acoustic wave; diamond-like carbon; wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628093

Filename

6628093