DocumentCode
3475893
Title
Modeling for contact resistance between metallic carbon nanotubes and semiconducting substrates of field emission devices
Author
Liu Lining ; Li Bin
Author_Institution
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
A Schottky Barrier would inevitably exist in Metal-Semiconductor contact, which will cause a contact resistance that effect emission current of field emission devices. A model of contact resistance between metallic carbon nanotubes (CNT) and doped semiconducting substrates is proposed in this paper to evaluate this effect. Besides, factors that impact this contact are discussed, which could be valuable for the design of CNT field emission devices.
Keywords
carbon nanotubes; contact resistance; field emission; CNT field emission devices; Schottky barrier; contact resistance modeling; doped semiconducting substrates; effect emission current; metal-semiconductor contact; metallic carbon nanotubes; Computational modeling; Semiconductor device modeling; Carbon Nanotube (CNT); Contact resistance; Emission Current; Field Emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628103
Filename
6628103
Link To Document