Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

Author

Han, C.Y. ; Leung, C.H. ; Lai, P.T. ; Tang, W.M. ; Che, C.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm²/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH₃ annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.

Keywords

ammonia; annealing; carrier mobility; fluorine; hafnium compounds; high-k dielectric thin films; plasma applications; thin film transistors; titanium compounds; F; HfTiO; NH₃; OTFT performance; ammonia annealing; carrier mobility; fluorine plasma treatment; high-k gate dielectric; on-off ratio; pentacene organic thin-film transistor; positive direction; subthreshold slope; threshold voltage; Annealing; Dielectrics; Insulators; Logic gates; Organic thin film transistors; Sensors; HfTiO; OTFT; dielectric; high k;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628118

Filename

6628118