Simulation of trap state effects in GaN DHFETs on buffer leakage current and breakdown voltage

Author

Jiangfeng Du ; Kunhua Ma ; Ziqi Zhao ; Qi Yu

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Influence of deep level trap states on the buffer leakage current of enhanced AlGaN/GaN/AlGaN double-heterostructure FETs have been studied. The relationship between the buffer leakage current and the breakdown voltage (V_br) of the device with different trap density and trap energy level in the AlGaN buffer layer was simulated. It is showed that the simulation results of the buffer leakage current and breakdown voltage by optimizing the trap density and trap energy level are consistent with the experimental data. The breakdown voltage increases linearly with the gate-to-drain distance (L_gd) and the highest V_br of 2300V is achieved by optimization.

Keywords

III-V semiconductors; buffer layers; field effect transistors; gallium compounds; leakage currents; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN-AlGaN; GaN DHFET; breakdown voltage; buffer layer; buffer leakage current; deep level trap states; double-heterostructure FET; gate-to-drain distance; optimization; trap density; trap energy level; Electric breakdown; Gallium nitride; Manuals; Substrates; Switches; Thermal stability; GaN DHFETs; breakdown voltage; leakage current; simulation; trap states;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628126

Filename

6628126