• DocumentCode
    347660
  • Title

    IDDQ testing in deep submicron integrated circuits

  • Author

    Miller, Anthony C.

  • Author_Institution
    Intel Corp., Chandler, AZ, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    724
  • Lastpage
    729
  • Abstract
    The increased background leakage current of deep submicron devices threatens the practical application of the traditional IDDQ test. This paper describes a new Delta IDDQ test technique which has proven effective at defect detection for deep submicron memory and logic devices
  • Keywords
    CMOS digital integrated circuits; CMOS memory circuits; SRAM chips; electric current measurement; fault diagnosis; integrated circuit testing; leakage currents; logic testing; microprocessor chips; CMOS process technology; Delta IDDQ test technique; IDDQ testing; SRAM testing; background leakage current; deep submicron integrated circuits; deep submicron logic devices; deep submicron memory devices; defect detection; microprocessor testing; signature analysis; CMOS process; CMOS technology; Circuit testing; Graphics; Integrated circuit testing; Leakage current; Logic testing; Materials testing; Measurement standards; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference, 1999. Proceedings. International
  • Conference_Location
    Atlantic City, NJ
  • ISSN
    1089-3539
  • Print_ISBN
    0-7803-5753-1
  • Type

    conf

  • DOI
    10.1109/TEST.1999.805801
  • Filename
    805801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=347660