• DocumentCode
    3476662
  • Title

    Ultra-low RESET current RRAM device by side-RESET operation method

  • Author

    Haitao Sun ; Hangbing, L.V. ; Qi Liu ; Shibing Long ; Ming Wang ; Hongwei Xie ; Xiaoyu Liu ; Xiaoyi Yang ; Jiebin Niu ; Ming Liu

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Resistive switching memory with low switching current is critical for low power application. In this work, we successfully demonstrated a four-terminal RRAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. Therefore, during RESET process, no current flows through the filaments, leading to an ultra-low switching current.
  • Keywords
    electrodes; low-power electronics; random-access storage; switching circuits; electrodes; four-terminal RRAM device; low power application; resistive switching memory; side-RESET operation method; ultra-low RESET current RRAM device; ultra-low switching current; Electrodes; Resistance; Substrates; filament; low power; planar structure; resistive switching memory; side-RESET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628141
  • Filename
    6628141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3476662