DocumentCode
3477259
Title
Trifilar-coupling QVCO using 0.35-µm SiGe HBT technology
Author
Syu, Jin-Siang ; Meng, Chinchun ; Huang, Guo-Wei
Author_Institution
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
fYear
2008
fDate
16-20 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
This paper demonstrates a trifilar-coupling QVCO with two coupling paths provided by the trifilar transformers. These two coupling paths achieve the output voltage swing optimization and the quadrature signal generation, respectively. Consequently, the trifilar-coupling QVCO using 0.35-mum SiGe HBT technology achieves the 188-dBc/Hz FOM at a 2-V supply.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; signal generators; voltage-controlled oscillators; HBT technology; SiGe; coupling paths; quadrature signal generation; size 0.35 mum; trifilar transformers; trifilar-coupling QVCO; voltage 2 V; voltage swing optimization; Amplitude modulation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Phase noise; Silicon germanium; Transformer cores; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location
Macau
Print_ISBN
978-1-4244-2641-6
Electronic_ISBN
978-1-4244-2642-3
Type
conf
DOI
10.1109/APMC.2008.4957867
Filename
4957867
Link To Document