Wideband Steady-State Numerical Model of a Tensile-Strained Bulk SOA

Author

Connelly, Michael J.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ.

fYear

2006

fDate

Sept. 2006

Firstpage

85

Lastpage

86

Abstract

A wideband steady-state numerical model of a tensile-strained bulk InP-InGaAsP semiconductor optical amplifier is presented. The model is applicable over a wide range of operating regimes. The model uses experimental measurements of the spontaneous emission spectra to extract pertinent model parameters such as the absorption loss, Auger recombination coefficients and effective intraband lifetime

Keywords

Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; tensile strength; Auger recombination coefficients; InP-InGaAsP; absorption loss; intraband lifetime; semiconductor optical amplifier; spontaneous emission spectra; tensile-strained bulk SOA; wideband steady-state numerical model; Charge carrier density; Equations; Numerical models; Optical waveguides; Polarization; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Tensile strain; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306753

Filename

4098793