24-GHz MMIC development using 0.15-µm GaAs PHEMT process for automotive radar applications

Author

Luo, Sheng-Ming ; Hung, Ruei-Yun ; Weng, Shou-Hsien ; Ye, Yan-Liang ; Chuang, Chia-Ning ; Lin, Chi-Hsien ; Chang, Hong-Yeh

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper presents 24-GHz monolithic microwave integrated circuit (MMIC) development for automotive radar applications. The chipset consists of a low noise amplifier (LNA), a power amplifier (PA) and a mixer. The LNA exhibits a small signal gain of 20 dB from 19 to 32 GHz with a noise figure of 3 dB. The PA achieves a small signal gain of 20 dB from 19 to 26 GHz with an output P_1dB of higher than 21 dBm. The mixer exhibits a conversion loss of 9 dB from 20 to 32 GHz with a port-to-port isolation of better than 24 dB.

Keywords

III-V semiconductors; MMIC; gallium arsenide; low noise amplifiers; mixers (circuits); power amplifiers; road vehicle radar; GaAs; MMIC; PHEMT process; automotive radar applications; frequency 19 GHz to 32 GHz; gain 20 dB; loss 9 dB; low noise amplifier; mixer; noise figure 3 dB; port-to-port isolation loss; power amplifier; size 0.15 mum; Application specific integrated circuits; Automotive engineering; Gain; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Radar applications; GaAs; PHEMT; Radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4957907

Filename

4957907