Eightfold-band differential SiGe HBT amplifier using stacked LC-tank circuits

Author

Itoh, Yasushi ; Shinohara, Toshio ; Shirata, Masaki ; Sakamoto, Kazuyoshi

Author_Institution

Dept. of Electr. & Electron. Eng., Shonan Inst. of Technol., Shonan

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The eightfold-band differential SiGe HBT amplifier has been demonstrated at L-band. It has been clearly shown that a concurrent multiple-band matching can be achieved with the use of the stacked LC-tank circuits. This is the first time to realize a concurrent multi-band matching of greater than dual-band. It can be expected that these results greatly contribute to the current multi-band and multi-mode communication systems as well as the next generation, adaptive and/or reconfigurable wireless radios.

Keywords

differential amplifiers; heterojunction bipolar transistors; radiofrequency amplifiers; silicon compounds; SiGe; eightfold-band differential HBT amplifier; multiband communication systems; multimode communication systems; multiple-band matching; reconfigurable wireless radios; stacked LC-tank circuits; Circuits; Differential amplifiers; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Radiofrequency amplifiers; Resonant frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4957910

Filename

4957910