Enhanced ion implantation charging damage on thin gate oxide due to photoresist

Author

Park, Donggun ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

93

Lastpage

95

Abstract

Charging damage during the high current ion implantation process is studied for the capacitors with 10 nm gate oxide in terms of photoresist pattern effect. Enhanced charging damage due to photoresist is studied quantitatively using antenna structures and a special photoresist pattern. Interface traps generated by the charging current injection are measured using the CV method, which is sensitive and simple to monitor the charging damage quantitatively. The oxide breakdown can be predicted from the charging voltage so determined. In-situ doped polysilicon was used for the gate electrode

Keywords

MOS capacitors; ion implantation; photoresists; surface charging; CV measurement; MOS capacitor; antenna structure; breakdown; charging damage; current injection; high current ion implantation; in-situ doped polysilicon; interface traps; photoresist; thin gate oxide; Antenna measurements; Breakdown voltage; Capacitors; Electrodes; Ion implantation; Monitoring; Plasma applications; Plasma devices; Plasma temperature; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586136

Filename

586136