DocumentCode
3478504
Title
Purity of low energy beams in R.F. linear accelerator based implanters
Author
Mctntyre, E.K. ; Jones, M. ; Nakatsugawa, T. ; Whaley, K. ; Wilson, S. ; Sugitani, M.
Author_Institution
Semicond. Equipment Div., Eaton Corp., Beverly, MA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
108
Lastpage
110
Abstract
Nearly monoenergetic beams of ions in the 10-200 keV range are critical in many implants for semiconductor fabrication. In this study, possible contamination scenarios leading to beam components significantly different in energy from the intended beam are examined in the context of a specialized use of an R.F. linear accelerator. In this specialized use, only the electrostatic quadrupole focusing elements of the linear accelerator are powered, and all R.F. components are unpowered. The beam is simply transported through the accelerator at extraction energy. Experiments have been performed to artificially create conditions which might lead to energy contamination. The susceptibility of the system to the transport of a contaminated beam was measured by direct observation of beam currents. For example, the transmitted current of the two partners in phosphorus dimer contamination are compared, showing large suppression factors. In these cases, it was found that the implanter system provides protection against contamination
Keywords
accelerator RF systems; ion accelerators; ion implantation; particle beam diagnostics; particle beam focusing; 10 to 200 keV; RF linear accelerator; Si:P; beam transport; electrostatic quadrupole focusing element; energy contamination; ion implantation; low energy beam purity; monoenergetic ion beam; phosphorus dimer; semiconductor fabrication; Contamination; Current measurement; Electrostatics; Fabrication; Implants; Ion beams; Linear accelerators; Particle beams; Pollution measurement; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586143
Filename
586143
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