Development of 10 KΩ quantum Hall array resistance standards at NMIJ

Author

Oe, T. ; Matsuhiro, K. ; Urano, C. ; Fujino, H. ; Ishii, H. ; Itatani, T. ; Sucheta, G. ; Maezawa, M. ; Kiryu, S. ; Kaneko, N.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan (NMIJ), Tsukuba, Japan

fYear

2010

fDate

13-18 June 2010

Firstpage

619

Lastpage

620

Abstract

An experimental device of quantum Hall array resistance standards (QHARS) with a nominal value close to 10 kΩ on the i = 2 plateau have been developed on a GaAs/AlGaAs hetero-substrate. This device consists of just 266 Hall bar elements that are connected by triple connection technique. Its nominal value has only 0.034 2 ppm differences from the integer value of 10⁴. This array device clearly shows the well-quantized 10 kΩ plateau (i=2).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; GaAs-AlGaAs; GaAs/AlGaAs heterosubstrate; Hall bar elements; NMIJ; array device; experimental device; integer value; nominal value; quantum Hall array resistance standards; resistance 10 kohm; triple connection technique; Bars; Contact resistance; Dry etching; Electrical resistance measurement; Gallium arsenide; Intrusion detection; Measurement standards; Standards development; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2010 Conference on

Conference_Location

Daejeon

Print_ISBN

978-1-4244-6795-2

Type

conf

DOI

10.1109/CPEM.2010.5544385

Filename

5544385