Electrical-thermal co-simulation for power redistribution layers of interposer with through-silicon vias

Author

Xiaoli Ren ; Cheng Xu ; Ye Ping ; Zhi Wang ; Cheng Pang ; Daquan Yu

Author_Institution

Nat. Center for Adv. Packaging, Wuxi, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

492

Lastpage

497

Abstract

In this paper, an TSV (Through-Silicon Via) Interposer with signal distribution networks (SDN) and power distribution networks (PDN) is proposed. And the temperature-dependent electrical resistivity of conductors and the Joule heating effect of the interposer are analyzed using the electrical-thermal co-simulation method. The simulation results show that the temperature effect on IR (voltage) drop is significant and can not be neglected.

Keywords

integrated circuit interconnections; integrated circuit modelling; three-dimensional integrated circuits; IR drop; Joule heating effect; PDN; SDN; TSV interposer; electrical-thermal co-simulation; power distribution networks; power redistribution layers; signal distribution networks; temperature-dependent electrical resistivity; through-silicon-vias; Current density; Electronic packaging thermal management; Mathematical model; Temperature distribution; Thermal conductivity; Three-dimensional displays; Through-silicon vias; IR drop; PDN; RDL; electrical-thermal co-simulation; interposer; tenperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756519

Filename

6756519