• DocumentCode
    3479074
  • Title

    Profile analysis of a 0.25 μm CMOS process

  • Author

    Current, Michael I. ; Castle, Matt ; Chia, Victor ; Mount, Gary ; Weinzierl, Steve ; Prussin, Si ; Larson, Larry

  • Author_Institution
    Appl. Materials, Austin, TX, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    194
  • Lastpage
    197
  • Abstract
    A complete set of doping profiles for a SEMATECH 0.25 μm CMOS/DRAM model process were implanted into 200 mm wafers with a 9500×R implanter. The implants ranged in energy from 10 to 600 keV over a dose range from 7×1011 to 3×1015 ions/cm2. The profiles were analyzed with an array of SIMS and SRP and junction staining techniques. Both as-implanted and annealed profiles were measured
  • Keywords
    CMOS memory circuits; DRAM chips; annealing; doping profiles; ion implantation; secondary ion mass spectra; 0.25 micron; 10 to 600 keV; SEMATECH CMOS/DRAM process; SIMS; SRP; annealing; doping profile; ion implantation; junction staining; Annealing; CMOS process; Cities and towns; Doping profiles; Dynamic range; Implants; Magnetic analysis; Mass spectroscopy; Semiconductor device modeling; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586182
  • Filename
    586182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3479074