P-ch and N-ch IGBTs for push-pull circuit in driver ICs

Author

Tsuchiya, K.

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

65

Lastpage

69

Abstract

P-ch and N-ch IGBTs (insulated-gate bipolar transistors) have been developed for high-side and low-side switches, respectively, in a push-pull circuit. These devices are of a collector-short type in order to utilize their parasitic diodes. The P-ch IGBT has two P-buffers and a deep N-base to increase not only latch-up current, but also on-state avalanche breakdown voltage. The N-ch IGBT is combined with the output pad to produce a collector-short structure and increase the collector area to obtain larger current capacity

Keywords

driver circuits; insulated gate bipolar transistors; power integrated circuits; power transistors; semiconductor switches; IGBT; avalanche breakdown voltage; collector-short type; driver ICs; high-side switches; insulated-gate bipolar transistors; low-side switches; n-channel type; p-channel type; parasitic diodes; push-pull circuit; Analytical models; Avalanche breakdown; Cities and towns; Diodes; Driver circuits; Electric breakdown; Electrons; Insulated gate bipolar transistors; Laboratories; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146068

Filename

146068