DocumentCode
3479930
Title
An Automatic Temperature Compensation Of Internal Sense Ground For Sub-quarter Micron Drams
Author
Ooishi, T. ; Hamade, K. ; Asakura, M. ; Yasuda, K. ; Hidaka, H. ; Miyamoto, H. ; Ozaki, H.
Author_Institution
Ulsi Laboratory, Mitsubishi Electric Corporation, Itami, Japan
fYear
1994
fDate
9-11 June 1994
Firstpage
77
Lastpage
78
Keywords
Circuits; Laboratories; Land surface temperature; Leakage current; Random access memory; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1918-4
Type
conf
DOI
10.1109/VLSIC.1994.586224
Filename
586224
Link To Document