DocumentCode
3480079
Title
Electro-migration of silver alloy wire with its application on bonding
Author
Shenggang Wang ; Liming Gao ; Ming Li ; Dacheng Huang ; Ken Qian ; Chiu, Huang-Jen
Author_Institution
Sch. of Mater. Sci. & Eng. (SMSE), Shanghai Jiao Tong Univ., Shanghai, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
789
Lastpage
793
Abstract
In recent years, silver alloy wire has been widely used in semiconductor industry. In contrast to conventional gold wire, silver alloy wire has better electrical property, thermal conductivity and lower cost while tends to migrate more easily under high temperature and current density. In this paper, electro-migration (EM) of silver alloy wire after wire bonding has been studied. Under accelerated test, cracks forms not only on silver alloy wire surface but also in silver alloy wire while gold wire remain the same. Silver ion not only migrates on the wire surface also inside the wire. Temperature and current density both accelerate the EM. The conclusion could be a reference for further gold reduction of Au/Ag alloy wire in semiconductor bonding.
Keywords
cracks; electromigration; gold alloys; integrated circuit bonding; integrated circuit interconnections; integrated circuit packaging; lead bonding; semiconductor device packaging; semiconductor industry; silver alloys; Ag; Au; EM; current density; electrical property; electromigration; gold reduction; semiconductor bonding; semiconductor industry; silver alloy wire surface; silver ion; thermal conductivity; wire bonding; Bonding; Gold; Silver; Stress; Surface morphology; Wires; accelerate; cracks; electromigration; silver alloy wire; wire bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756583
Filename
6756583
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