DocumentCode

3480317

Title

The Source Sensed Sram (S3) Cell

Author

O´Connor

Author_Institution

AT&T Bell Laboratories

fYear

1994

fDate

9-11 June 1994

Firstpage

119

Lastpage

120

Keywords

Application specific integrated circuits; Capacitance; Circuit noise; Delay; Inverters; Rails; Random access memory; Topology; Voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1918-4

Type

conf

DOI

10.1109/VLSIC.1994.586245

Filename

586245