Ultrafast carrier lifetime in low-temperature grown GaAs, InP and InGaP

Author

Kostoulas, Y. ; Ucer, K.B. ; Waxer, L. ; Wicks, G.W. ; Walmsley, La ; Fauchet, P.M.

Author_Institution

Rochester Univ., NY, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

21

Abstract

The authors performed a series of up-conversion and pump-probe measurements on InP and InGaP grown at 200°C and 300°C. The optical response of these materials is found to be qualitatively the same in spite of their different electronic properties and is similar to what has also been observed in the case of LT-GaAs. The lifetime of carriers in InP is found to be 500 fs for a growth temperature of 200°C and 1.6 ps if the growth takes place at 300°C. A fast carrier relaxation is observed in LT-InP which is due to carrier-carrier scattering followed by induced absorption which may be associated with lattice heating

Keywords

carrier lifetime; 200 C; 300 C; GaAs; InGaP; InP; carrier lifetime; carrier-carrier scattering; electronic properties; fast carrier relaxation; growth temperature; induced absorption; lattice heating; optical response; pump-probe measurements; ultrafast carrier lifetime; up-conversion measurements; Absorption; Charge carrier lifetime; Gallium arsenide; Indium phosphide; Optical materials; Optical pumping; Optical scattering; Performance evaluation; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586291

Filename

586291