A new peripheral planar structure allowing a symmetrical blocking voltage

Author

Causse, O. ; Austin, P. ; Sanchez, J.L.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

1

fYear

1999

fDate

1999

Firstpage

59

Abstract

A new peripheral symmetrical planar structure of junction termination type is presented, allowing symmetrical blocking voltage. This peripheral structure can be considered as a new element for power monolithic integration. Based on 2D simulations, this peripheral structure has been optimized to obtain the maximum two-directional breakdown voltage capability

Keywords

avalanche breakdown; circuit simulation; power integrated circuits; power semiconductor switches; semiconductor device breakdown; semiconductor device models; 2D simulations; PISCES; avalanche breakdowm; current distribution; depletion layer; junction termination type; peripheral planar structure; power monolithic integration element; power semiconductor devices; symmetrical blocking voltage; two-directional breakdown voltage capability; Cathodes; Circuit simulation; Design optimization; Geometry; Monolithic integrated circuits; Power electronics; Power semiconductor devices; Silicon; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810387

Filename

810387