Two photon absorption and photoconductivity in photosensitive glasses

Author

Weitzman, Peter S. ; Österberg, Ulf

Author_Institution

Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

135

Abstract

In this paper we present experimental evidence for the creation of defects in Ge doped silica by exposure to intense visible or UV light. The presence of the defects is detected by an increase in two photon absorption at 1053 nm and an increase in photoconductivity at 488 nm. This provides evidence to support models for photoinduced second harmonic generation based on interference between single photon absorption of visible light and two photon absorption of IR light. In as much as photoinduced SHG has been observed in many other glass systems, results from this paper can be generalized to provide a picture of photoinduced SHG in solid, centrosymmetric systems

Keywords

photoconductivity; 1053 nm; 488 nm; IR light; SiO₂-GeO₂; UV light; centrosymmetric systems; defects; photoconductivity; photoinduced SHG; photoinduced second harmonic generation; photosensitive glasses; two photon absorption; visible light; Area measurement; Electromagnetic wave absorption; Equations; Fiber lasers; Glass; Interference; Photoconductivity; Power measurement; Silicon compounds; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586360

Filename

586360