Fabrication of nanostructures using electron beam interference technique-a proposal

The fabrication and investigation of low dimensional semiconductor nanostructures have received increasing attention in recent years. The quasi one- and zero-dimensional structures have shown improved optical and electrical properties that increase device performance and enable development of novel devices. Many technological approaches have been developed to define ultrasmall semiconductor structures as in quantum wire and quantum dot fabrication. In this paper, a method based on electron beam interference, for nanostructures fabrication is proposed. Nanoscale wires or gratings, as well as dots, are generated using this method which is simple, maskless and of high throughput.