• DocumentCode
    3483435
  • Title

    Performance characteristics of the Genus Inc. TandetronTM 1520 MeV ion implantation system

  • Author

    O´Connor, J.P. ; Chase, Michael S. ; Richards, Steven L F ; Tokoro, Nobuhiro

  • Author_Institution
    Ion Technol. Div., Genus Inc., Newburyport, MA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    454
  • Lastpage
    457
  • Abstract
    As the MeV ion implantation market expands and matures, the tools used for the high energy processes must meet stringent customer requirements. In order to meet the needs of production users, Genus Inc. has developed the TandetronTM 1520 MeV ion implantation system. The TandetronTM 1520 is a third-generation high energy ion implanter which evolved from the successful Genus 1510 system. In this work, a review of the key performance characteristics of the system are presented. Included are parameters such as beam generation, implant profiles, wafer throughputs, particle performance, automation capabilities, and maintainability. In particular, the following features are highlighted: (1) energy range expansion, (2) footprint reduction, (3) ion source innovations, (4) control system and user interface enhancements, and, (5) maintenance simplification
  • Keywords
    ion implantation; 1520 MeV; Genus Tandetron 1520; automation; beam generation; control system; energy range; high energy ion implanter; implant profile; ion source; maintainability; particle contamination; system footprint; user interface; wafer throughput; Automatic control; Automation; Control systems; Implants; Ion implantation; Ion sources; Particle beams; Production systems; Technological innovation; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586397
  • Filename
    586397